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Consider a Si p-n junction and a GaN p-n junction, both doped
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Consider a Si p-n junction and a GaN p-n junction, both doped with an acceptor concentration of NA = 5 x 10^18 cm^-3 and a donor concentration ND = 5 x 10^15 cm^-3. The intrinsic carrier concentration of Si, ni(Si) = 1 x 10^10 cm^-3 and static dielectric constant of Si ε(Si) = 11.9ε0, whereas ni(GaN) = 1 x 10^-10 cm^-3 and ε(GaN) = 8.9ε0, where ε0 = 8.85 x 10^-14 farad per centimeter (F/cm). Estimate the built-in voltages for both Si and GaN, the depletion width for both Si and GaN, and the peak electric field for both Si and GaN. Make a few comments about the comparison results between Si and GaN.

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Consider a Si p-n junction and a GaN p-n junction, both doped with an acceptor concentration of NA = 5 x 10^18 cm^-3 and a donor concentration ND = 5 x 10^15 cm^-3. The intrinsic carrier concentration of Si, ni(Si) = 1 x 10^10 cm^-3 and static dielectric constant of Si ε(Si) = 11.9ε0, whereas ni(GaN) = 1 x 10^-10 cm^-3 and ε(GaN) = 8.9ε0, where ε0 = 8.85 x 10^-14 farad per centimeter (F/cm). Estimate the built-in voltages for both Si and GaN, the depletion width for both Si and GaN, and the peak electric field for both Si and GaN. Make a few comments about the comparison results between Si and GaN.
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Question Text
Consider a Si p-n junction and a GaN p-n junction, both doped with an acceptor concentration of NA = 5 x 10^18 cm^-3 and a donor concentration ND = 5 x 10^15 cm^-3. The intrinsic carrier concentration of Si, ni(Si) = 1 x 10^10 cm^-3 and static dielectric constant of Si ε(Si) = 11.9ε0, whereas ni(GaN) = 1 x 10^-10 cm^-3 and ε(GaN) = 8.9ε0, where ε0 = 8.85 x 10^-14 farad per centimeter (F/cm). Estimate the built-in voltages for both Si and GaN, the depletion width for both Si and GaN, and the peak electric field for both Si and GaN. Make a few comments about the comparison results between Si and GaN.
TopicAll topics
SubjectPhysics
ClassClass 11