Class 12 Physics Modern Physics Semiconductors



The breakdown in a reverse biased p-n junction diode is more likely to occur due to
(a)
large velocity of the minority charge carries if the doping concentration is small
(b)
large velocity of the minority charge carries if the doping concentration is large
(c)
(c ) strong electric field in a depletion region if the doping concentration is small
(d)
(d ) strong electric field in a depletion region if the doping concentration is large.
Correct answer: (a)  (d) 

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solid and semiconductor devices
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solid and semiconductor devices
nuclear physics
electrons and photons
atomic physics
dual nature of radiation and matter